BC846BP

BC846BPDW1T1G vs BC846BPDW1T1 vs BC846BPDW1T1G , MAX6752K

 
PartNumberBC846BPDW1T1GBC846BPDW1T1BC846BPDW1T1G , MAX6752K
DescriptionBipolar Transistors - BJT 100mA 80V Dual ComplementaryBipolar Transistors - BJT 100mA 80V Dual
ManufacturerON SemiconductorLRC-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max65 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.6 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBC846BPDW1--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A--
DC Collector/Base Gain hfe Min150--
Pd Power Dissipation380 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Manufacturer Part # Description RFQ
BC846BPDW1T1G Bipolar Transistors - BJT 100mA 80V Dual Complementary
BC846BPDW1T1G-CUT TAPE New and Original
BC846BPN,115-CUT TAPE New and Original
BC846BPDW1T1 Bipolar Transistors - BJT 100mA 80V Dual
BC846BPDW1T1G , MAX6752K New and Original
BC846BPN TRANSISTOR, NPN, 65V, 100MA, SOT363, Transistor Polarity:NPN, PNP, Collector Emitter Voltage V(br)ceo:65V, Transition Frequency ft:100MHz, Power Dissipation Pd:200mW, DC Collector Current:100mA,
BC846BPN/BC846B New and Original
BC846BPN/DG/B3 New and Original
BC846BPN/DG/B3115 New and Original
BC846BPN115 New and Original
Nexperia
Nexperia
BC846BPN,115 Bipolar Transistors - BJT TRANSISTOR 56BS/SOT363/
BC846BPN/DG/B3X TRANS GEN PURPOSE SC-88
BC846BPN/ZLX TRANS NPN/PNP 65V 0.1A 6TSSOP
BC846BPN,115 TRANS NPN/PNP 65V 0.1A 6TSSOP
ON Semiconductor
ON Semiconductor
BC846BPDW1T1G Bipolar Transistors - BJT 100mA 80V Dual Complementary
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