| PartNumber | BC847BE6433HTMA1 | BC847BE6327XT | BC847BE6327HTSA1 |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Bipolar Transistors - BJT NPN 45 V 100 mA | Bipolar Transistors - BJT NPN 45 V 100 mA |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
| Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 200 mV | 200 mV | 200 mV |
| Maximum DC Collector Current | 200 mA | 200 mA | 200 mA |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | 250 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | BC847 | - | BC847 |
| DC Current Gain hFE Max | 450 | 450 | 450 |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 100 mA | 100 mA | 100 mA |
| DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
| Pd Power Dissipation | 330 mW | 330 mW | 330 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 10000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 847B BC BC847BE6433XT E6433 SP000010576 | 847B BC BC847BE6327HTSA1 E6327 SP000010559 | 847B BC BC847BE6327XT E6327 SP000010559 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Qualification | - | AEC-Q101 | AEC-Q101 |