PartNumber | BC847CE6433HTMA1 | BC847CE6433 |
Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon |
Manufacturer | Infineon | - |
Product Category | Bipolar Transistors - BJT | - |
RoHS | Y | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-23-3 | - |
Transistor Polarity | NPN | - |
Configuration | Single | - |
Collector Emitter Voltage VCEO Max | 45 V | - |
Collector Base Voltage VCBO | 50 V | - |
Emitter Base Voltage VEBO | 6 V | - |
Collector Emitter Saturation Voltage | 200 mV | - |
Maximum DC Collector Current | 200 mA | - |
Gain Bandwidth Product fT | 250 MHz | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 150 C | - |
Series | BC847 | - |
DC Current Gain hFE Max | 800 | - |
Packaging | Reel | - |
Brand | Infineon Technologies | - |
Continuous Collector Current | 100 mA | - |
DC Collector/Base Gain hfe Min | 420 | - |
Pd Power Dissipation | 330 mW | - |
Product Type | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 10000 | - |
Subcategory | Transistors | - |
Part # Aliases | 847C BC BC847CE6433XT E6433 SP000010590 | - |
Unit Weight | 0.000282 oz | - |