BC847CE64

BC847CE6433HTMA1 vs BC847CE6433

 
PartNumberBC847CE6433HTMA1BC847CE6433
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTORSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
ManufacturerInfineon-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-23-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max45 V-
Collector Base Voltage VCBO50 V-
Emitter Base Voltage VEBO6 V-
Collector Emitter Saturation Voltage200 mV-
Maximum DC Collector Current200 mA-
Gain Bandwidth Product fT250 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBC847-
DC Current Gain hFE Max800-
PackagingReel-
BrandInfineon Technologies-
Continuous Collector Current100 mA-
DC Collector/Base Gain hfe Min420-
Pd Power Dissipation330 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity10000-
SubcategoryTransistors-
Part # Aliases847C BC BC847CE6433XT E6433 SP000010590-
Unit Weight0.000282 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BC847CE6433HTMA1 Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
BC847CE6433HTMA1 TRANS NPN 45V 0.1A SOT-23
BC847CE6433 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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