BC847CLT3

BC847CLT3G vs BC847CLT3 vs BC847CLT3G , MAX6327XR26

 
PartNumberBC847CLT3GBC847CLT3BC847CLT3G , MAX6327XR26
DescriptionBipolar Transistors - BJT 100mA 50V NPNBipolar Transistors - BJT 100mA 50V NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.6 V0.6 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC847CLBC847CL-
Height0.94 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A0.1 A-
DC Collector/Base Gain hfe Min420--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.050717 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-420 @ 2mA, 5V-
Vce Saturation Max Ib Ic-600mV @ 5mA, 100mA-
Current Collector Cutoff Max-15nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-225 mW-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-420-
Manufacturer Part # Description RFQ
BC847CLT3G Bipolar Transistors - BJT 100mA 50V NPN
BC847CLT3 Bipolar Transistors - BJT 100mA 50V NPN
BC847CLT3G , MAX6327XR26 New and Original
ON Semiconductor
ON Semiconductor
BC847CLT3G TRANS NPN 45V 0.1A SOT-23
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