 |  | | |
| PartNumber | BC847SH6433XTMA1 | BC847SH6433XT | BC847SH6433 |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR | |
| Manufacturer | Infineon | - | Infineon |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 200 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC847 | - | - |
| DC Current Gain hFE Max | 450 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 847S BC BC847SH6433XT H6433 SP000747404 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BC847SH6433XTMA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BC847SH6433XTMA1 | TRANS 2NPN 45V 0.1A SOT363 | ||
| BC847SH6433XT | Bipolar Transistors - BJT AF TRANSISTOR | ||
| BC847SH6433 | New and Original |