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BC850CL

BC850CLT1G vs BC850CLT1G-CUT TAPE vs BC850CLT1

 
PartNumberBC850CLT1GBC850CLT1G-CUT TAPEBC850CLT1
DescriptionBipolar Transistors - BJT 100mA 50V NPNTRANS NPN 45V 0.1A SOT23
ManufacturerON Semiconductor-ON
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.6 V-0.6 V
Maximum DC Collector Current0.1 A-0.1 A
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBC850CL-BC850CL
Height0.94 mm--
Length2.9 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A-0.1 A
DC Collector/Base Gain hfe Min420--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz-0.050717 oz
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3 (TO-236)
Power Max--225mW
Transistor Type--NPN
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--420 @ 2mA, 5V
Vce Saturation Max Ib Ic--600mV @ 5mA, 100mA
Current Collector Cutoff Max--15nA (ICBO)
Frequency Transition--100MHz
Pd Power Dissipation--225 mW
Collector Emitter Voltage VCEO Max--45 V
Collector Base Voltage VCBO--50 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--420
Manufacturer Part # Description RFQ
BC850CLT1G Bipolar Transistors - BJT 100mA 50V NPN
BC850CLT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor 		BC850CLT1G Bipolar Transistors - BJT 100mA 50V NPN
BC850CLT1 TRANS NPN 45V 0.1A SOT23
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