PartNumber | BC856BMBYL | BC856BMYL |
Description | Bipolar Transistors - BJT BC856BMB/XQFN3/REEL 7" Q1/T1 * | Bipolar Transistors - BJT BC856BM/XQFN3/REEL 7" Q1/T1 *S |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | DFN-1006-3 | DFN-1006B-3 |
Transistor Polarity | PNP | - |
Configuration | Single | - |
Collector Emitter Voltage VCEO Max | - 60 V | - |
Collector Base Voltage VCBO | - 80 V | - |
Emitter Base Voltage VEBO | - 6 V | - |
Collector Emitter Saturation Voltage | - 200 mV | - |
Maximum DC Collector Current | - 100 mA | - |
Gain Bandwidth Product fT | 100 MHz | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | - |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Continuous Collector Current | - 100 mA | - |
DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | - |
Pd Power Dissipation | 250 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 10000 | 10000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.000024 oz | - |