PartNumber | BC856BS,135 | BC856BS,115 |
Description | Bipolar Transistors - BJT PNP/PNP -65 V -100mA | Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | TSSOP-6 |
Transistor Polarity | PNP | PNP |
Collector Emitter Voltage VCEO Max | - 65 V | - 65 V |
Emitter Base Voltage VEBO | - 6 V | - 6 V |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Continuous Collector Current | - 100 mA | - 100 mA |
DC Collector/Base Gain hfe Min | 200 | 290 |
Pd Power Dissipation | 200 mW | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 10000 | 3000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.000212 oz | 0.035274 oz |
Configuration | - | Dual |
Collector Base Voltage VCBO | - | 80 V |
Maximum DC Collector Current | - | - 200 mA |
Gain Bandwidth Product fT | - | 100 MHz |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
DC Current Gain hFE Max | - | 200 at 2 mA, 5 V |
Height | - | 1 mm |
Length | - | 2.2 mm |
Width | - | 1.35 mm |