BC857BDW1

BC857BDW1T1G vs BC857BDW1T1G-CUT TAPE vs BC857BDW1T1

 
PartNumberBC857BDW1T1GBC857BDW1T1G-CUT TAPEBC857BDW1T1
DescriptionBipolar Transistors - BJT 100mA 50V Dual PNPBipolar Transistors - BJT 100mA 50V Dual PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.65 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBC857BDW1--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min220--
Pd Power Dissipation380 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000988 oz--
Manufacturer Part # Description RFQ
BC857BDW1T1G Bipolar Transistors - BJT 100mA 50V Dual PNP
BC857BDW1T1G-CUT TAPE New and Original
BC857BDW1T1 Bipolar Transistors - BJT 100mA 50V Dual PNP
ON Semiconductor
ON Semiconductor
BC857BDW1T1G Bipolar Transistors - BJT 100mA 50V Dual PNP
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