BC857BLP4

BC857BLP4-7B vs BC857BLP4-7 vs BC857BLP4-7-B

 
PartNumberBC857BLP4-7BBC857BLP4-7BC857BLP4-7-B
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10KBipolar Transistors - BJT 250mW -45VTrans GP BJT PNP 45V 0.1A 3-Pin DFN-H4 T/R (Alt: BC857BLP4-7B)
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN1006H4-3DFN-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 45 V45 V-
Collector Base Voltage VCBO- 50 V50 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 650 mV--
Maximum DC Collector Current- 200 mA0.1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC857BBC857B-
PackagingReelReel-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 100 mA--
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V220-
Pd Power Dissipation250 mW250 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity100003000-
SubcategoryTransistorsTransistors-
DC Current Gain hFE Max-220 at 2 mA, 5 V-
Height-0.35 mm-
Length-1 mm-
Width-0.6 mm-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BC857BLP4-7B Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
BC857BLP4-7 Bipolar Transistors - BJT 250mW -45V
BC857BLP4-7-B Trans GP BJT PNP 45V 0.1A 3-Pin DFN-H4 T/R (Alt: BC857BLP4-7B)
BC857BLP4-7 Bipolar Transistors - BJT 250mW -45V
BC857BLP4-7B Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
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