PartNumber | BC857BT | BC857BT 115 | BC857BT 3F |
Description | Bipolar Transistors - BJT PNP GEN PURPOSE | ||
Manufacturer | Central Semiconductor | - | SEIMENS |
Product Category | Bipolar Transistors - BJT | - | IC Chips |
RoHS | Y | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 45 V | - | - |
Collector Base Voltage VCBO | 50 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Maximum DC Collector Current | 0.1 A | - | - |
Gain Bandwidth Product fT | 250 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BC857 | - | - |
Packaging | Reel | - | - |
Brand | Central Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 250 | - | - |
Pd Power Dissipation | 250 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | BC857BT TR | - | - |