PartNumber | BC857SH6327XTSA1 | BC857SH6327XT | BC857SH6433XTMA1 |
Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTORS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
Transistor Polarity | PNP | PNP | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
Collector Base Voltage VCBO | 50 V | 50 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 250 mV | 250 mV | - |
Maximum DC Collector Current | 200 mA | 200 mA | - |
Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BC857 | - | - |
DC Current Gain hFE Max | 630 | 630 | - |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Continuous Collector Current | 100 mA | 100 mA | - |
DC Collector/Base Gain hfe Min | 200 | 200 | - |
Pd Power Dissipation | 250 mW | 250 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 857S BC BC857SH6327XT H6327 SP000747456 | 857S BC BC857SH6327XTSA1 H6327 SP000747456 | 857S BC BC857SH6433XT H6433 SP000747576 |
Unit Weight | 0.000265 oz | 0.000265 oz | - |