BC858BT

BC858BT116 vs BC858BT/R vs BC858BTA

 
PartNumberBC858BT116BC858BT/RBC858BTA
DescriptionBipolar Transistors - BJT PNP 30V 1MA100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB (Also Known As: BC858B)Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSST-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.65 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBC858B--
DC Current Gain hFE Max480--
Height0.95 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min210--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBC858B--
Unit Weight0.001058 oz--
Manufacturer Part # Description RFQ
BC858BT116 Bipolar Transistors - BJT PNP 30V 1MA
BC858BT/R 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB (Also Known As: BC858B)
BC858BTR New and Original
BC858BT116 TRANS PNP 30V 0.1A SST3
BC858BTA Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
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