 |  | |
| PartNumber | BC858BWH6327XTSA1 | BC858BWH6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-323-3 | - |
| Transistor Polarity | PNP | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 30 V | - |
| Collector Base Voltage VCBO | 30 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 250 mV | - |
| Maximum DC Collector Current | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BC858 | - |
| DC Current Gain hFE Max | 450 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 858BW BC BC858BWH6327XT H6327 SP000747582 | - |
| Unit Weight | 0.000176 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BC858BWH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BC858BWH6327XTSA1 | TRANS PNP 30V 0.1A SOT323 | ||
| BC858BWH6327 | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |