BC858BWT10

BC858BWT106 vs BC858BWT106 , MAX6632UT

 
PartNumberBC858BWT106BC858BWT106 , MAX6632UT
DescriptionBipolar Transistors - BJT PNP 30V 1MA
ManufacturerROHM Semiconductor-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-323-3-
Transistor PolarityPNP-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max- 30 V-
Collector Base Voltage VCBO- 30 V-
Emitter Base Voltage VEBO- 5 V-
Collector Emitter Saturation Voltage- 0.6 V-
Maximum DC Collector Current0.1 A-
Gain Bandwidth Product fT250 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBC858BW-
DC Current Gain hFE Max480-
Height0.8 mm-
Length2 mm-
PackagingReel-
Width1.25 mm-
BrandROHM Semiconductor-
Continuous Collector Current- 0.1 A-
DC Collector/Base Gain hfe Min210-
Pd Power Dissipation350 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # AliasesBC858BW-
Unit Weight0.000176 oz-
Manufacturer Part # Description RFQ
BC858BWT106 Bipolar Transistors - BJT PNP 30V 1MA
BC858BWT106 TRANS PNP 30V 0.1A SOT-323
BC858BWT106 , MAX6632UT New and Original
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