PartNumber | BCM847DS,115 | BCM847DS,135 | BCM847QASZ |
Description | Bipolar Transistors - BJT TRANS MATCHED PAIR | Bipolar Transistors - BJT TRANS MATCHED PAIR | Bipolar Transistors - BJT BCM847QAS DFN1010B-6 |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-457-6 | SOT-457-6 | DFN-1010B-6 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Dual | Dual | Dual |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Maximum DC Collector Current | 0.1 A | 0.1 A | 100 mA |
Gain Bandwidth Product fT | 250 MHz | 250 MHz | 100 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 200 at 2 mA, 5 V | 200 at 2 mA, 5 V | 450 |
Height | 1 mm | 1 mm | - |
Length | 3.1 mm | 3.1 mm | - |
Packaging | Reel | Reel | Reel |
Width | 1.7 mm | 1.7 mm | - |
Brand | Nexperia | Nexperia | Nexperia |
DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | 200 at 2 mA, 5 V | 200 |
Pd Power Dissipation | 380 mW | 380 mW | 350 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 10000 | 5000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | BCM847DS T/R | /T3 BCM847DS | - |
Unit Weight | 0.000381 oz | - | - |
Collector Emitter Saturation Voltage | - | - | 400 mV |
Continuous Collector Current | - | - | 100 mA |