BCM846SH

BCM846SH6327XTSA1 vs BCM846SH6327 vs BCM846SH6327XT

 
PartNumberBCM846SH6327XTSA1BCM846SH6327BCM846SH6327XT
DescriptionBipolar Transistors - BJT AF TRANSISTORTRANSISTOR ARRAY NPN AF 65V 100MA SOT363, PK
ManufacturerInfineon-Infineon Technologies
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max65 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage200 mV--
Maximum DC Collector Current200 mA--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBCM846-BCM846
DC Current Gain hFE Max450--
PackagingReel-Tape & Reel (TR)
BrandInfineon Technologies--
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases846S BCM BCM846SH6327XT H6327 SP000747590--
Unit Weight0.000265 oz--
Part Aliases--846S BCM BCM846SH6327XT H6327 SP000747590
Package Case--6-VSSOP, SC-88, SOT-363
Mounting Type--Surface Mount
Supplier Device Package--PG-SOT363-6
Power Max--250mW
Transistor Type--2 NPN (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--65V
DC Current Gain hFE Min Ic Vce--200 @ 2mA, 5V
Vce Saturation Max Ib Ic--650mV @ 5mA, 100mA
Current Collector Cutoff Max--15nA (ICBO)
Frequency Transition--250MHz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BCM846SH6327XTSA1 Bipolar Transistors - BJT AF TRANSISTOR
BCM846SH6327 TRANSISTOR ARRAY NPN AF 65V 100MA SOT363, PK
BCM846SH6327XT New and Original
BCM846SH6327XTSA1 TRANS 2NPN 65V 0.1A SOT363
Top