 |  | | |
| PartNumber | BCM856SH6327XTSA1 | BCM856SH6327 | BCM856SH6327XTSAI |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363 | |
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 250 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCM856 | - | - |
| DC Current Gain hFE Max | 630 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 856S BCM BCM856SH6327XT H6327 SP000747592 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BCM856SH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BCM856SH6327XTSAI | New and Original | ||
| BCM856SH6327XTSA1 | TRANS 2PNP 65V 0.1A SOT363 | ||
| BCM856SH6327 | Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363 |