BCP51T

BCP51TA vs BCP51T1G vs BCP51TA-79

 
PartNumberBCP51TABCP51T1GBCP51TA-79
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT125 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBCP51--
DC Current Gain hFE Max40--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BCP51TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Nexperia
Nexperia
BCP51TF Bipolar Transistors - BJT BCP51T_SER - 45 V, 1 A PNP medium power transistors
ON Semiconductor
ON Semiconductor
BCP51T1G New and Original
BCP51TA-79 New and Original
BCP51TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
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