BCP521

BCP5210TA vs BCP5210 vs BCP52135

 
PartNumberBCP5210TABCP5210BCP52135
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1KSmall Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT125 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBCP52--
DC Current Gain hFE Max63--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BCP5216TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
BCP5210TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Infineon Technologies
Infineon Technologies
BCP5216H6327XTSA1 Bipolar Transistors - BJT AF TRANSISTORS
NXP Semiconductors
NXP Semiconductors
BCP5210 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCP52135 New and Original
BCP5210TA-79 New and Original
BCP5216 Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP5216TA-79 New and Original
BCP5216TADIODES New and Original
BCP5216E6327 New and Original
BCP5210TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
BCP5216TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Infineon Technologies
Infineon Technologies
BCP5216E6327HTSA1 TRANS PNP 60V 1A SOT-223
BCP5216H6327XTSA1 TRANS PNP 60V 1A SOT223
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