BCP5416H

BCP5416H6433XTMA1 vs BCP5416H6327XTSA1 vs BCP5416H6327

 
PartNumberBCP5416H6433XTMA1BCP5416H6327XTSA1BCP5416H6327
DescriptionBipolar Transistors - BJT AF TRANSISTORSTRANS NPN 45V 1A SOT223NPN SILICON AF TRANSISTOR
ManufacturerInfineon--
Product CategoryBipolar Transistors - BJT--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current200 mA--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250--
PackagingReel--
BrandInfineon Technologies--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min100--
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Part # Aliases54-16 BCP H6433 SP000748132--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BCP5416H6433XTMA1 Bipolar Transistors - BJT AF TRANSISTORS
Infineon Technologies
Infineon Technologies
BCP5416H6327XTSA1 TRANS NPN 45V 1A SOT223
BCP5416H6433XTMA1 Bipolar Transistors - BJT AF TRANSISTORS
BCP5416H6327 NPN SILICON AF TRANSISTOR
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