BCP551

BCP5510TA vs BCP55115 vs BCP5510E6327

 
PartNumberBCP5510TABCP55115BCP5510E6327
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1KNPN SILICON AF TRANSISTOR
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBCP55--
DC Current Gain hFE Max160--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min63--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BCP5510TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
BCP5516TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
NXP Semiconductors
NXP Semiconductors
BCP55115 New and Original
BCP5516 New and Original
BCP5516E6327 New and Original
BCP5516TA-79 New and Original
BCP551R New and Original
BCP5510E6327 NPN SILICON AF TRANSISTOR
BCP5516TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
BCP5510TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Infineon Technologies
Infineon Technologies
BCP5516E6327HTSA1 New and Original
BCP5516H6327XTSA1 TRANS NPN 60V 1A SOT223
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