PartNumber | BCP5616TA | BCP5616T1 | BCP5616T1G |
Description | Bipolar Transistors - BJT NPN Medium Power | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin | Transistor: NPN, bipolar, 100V, 1A, 1.5W, SOT223 |
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.5 V | - | - |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 125 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BCP56 | - | - |
DC Current Gain hFE Max | 250 at 150 mA, 2 V | - | - |
Packaging | Reel | - | - |
Brand | Diodes Incorporated | - | - |
Continuous Collector Current | 1 A | - | - |
DC Collector/Base Gain hfe Min | 25 at 5 mA, 2 V | - | - |
Pd Power Dissipation | 2 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.003951 oz | - | - |