BCR108SH

BCR108SH6327XTSA1 vs BCR108SH6327 vs BCR108SH6433XTMA1

 
PartNumberBCR108SH6327XTSA1BCR108SH6327BCR108SH6433XTMA1
DescriptionBipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORSSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, SiliconTRANS 2NPN PREBIAS 0.25W SOT363
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased
Package / CaseSOT-363-6--
PackagingReelTape & Reel (TR)Tape & Reel (TR) Alternate Packaging
BrandInfineon Technologies--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
SubcategoryTransistors--
Part # Aliases108S BCR BCR18SH6327XT H6327 SP000750774--
Series---
Package Case-6-VSSOP, SC-88, SOT-3636-VSSOP, SC-88, SOT-363
Mounting Type-Surface MountSurface Mount
Supplier Device Package-PG-SOT363-6PG-SOT363-6
Power Max-250mW250mW
Transistor Type-2 NPN - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)
Current Collector Ic Max-100mA100mA
Voltage Collector Emitter Breakdown Max-50V50V
Resistor Base R1 Ohms-2.2k2.2k
Resistor Emitter Base R2 Ohms-47k47k
DC Current Gain hFE Min Ic Vce-70 @ 5mA, 5V70 @ 5mA, 5V
Vce Saturation Max Ib Ic-300mV @ 500μA, 10mA300mV @ 500μA, 10mA
Current Collector Cutoff Max---
Frequency Transition-170MHz170MHz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BCR108SH6327XTSA1 Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
Infineon Technologies
Infineon Technologies
BCR108SH6327 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
BCR108SH6327XTSA1 TRANS 2NPN PREBIAS 0.25W SOT363
BCR108SH6433XTMA1 TRANS 2NPN PREBIAS 0.25W SOT363
BCR108SH6327XT Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: BCR108SH6327XTSA1)
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