PartNumber | BCR35PNH6327XTSA1 | BCR35PNH6327 |
Description | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 100mA |
Manufacturer | Infineon | Infineon Technologies |
Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
RoHS | Y | - |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | - |
Series | BCR35 | BCR35 |
Packaging | Reel | Digi-ReelR Alternate Packaging |
Brand | Infineon Technologies | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 3000 | - |
Subcategory | Transistors | - |
Part # Aliases | 35PN BCR BCR35PNH6327XT H6327 SP000757922 | - |
Unit Weight | 0.000265 oz | 0.000265 oz |
Part Aliases | - | 35PN BCR BCR35PNH6327XT H6327 SP000757922 |
Package Case | - | 6-VSSOP, SC-88, SOT-363 |
Mounting Type | - | Surface Mount |
Supplier Device Package | - | PG-SOT363-6 |
Power Max | - | 250mW |
Transistor Type | - | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current Collector Ic Max | - | 100mA |
Voltage Collector Emitter Breakdown Max | - | 50V |
Resistor Base R1 Ohms | - | 10k |
Resistor Emitter Base R2 Ohms | - | 47k |
DC Current Gain hFE Min Ic Vce | - | 70 @ 5mA, 5V |
Vce Saturation Max Ib Ic | - | 300mV @ 500μA, 10mA |
Current Collector Cutoff Max | - | - |
Frequency Transition | - | 150MHz |