 |  | |
| PartNumber | BCV62CE6327HTSA1 | BCV62CE6327 |
| Description | Bipolar Transistors - BJT PNP 30 V 100 mA | Infineon Bipolar Transistors for Current Mirror Application BCV62C - SOT143-4-1 |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-143-4 | - |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 30 V | - |
| Collector Base Voltage VCBO | 30 V | - |
| Emitter Base Voltage VEBO | 6 V | - |
| Collector Emitter Saturation Voltage | 250 mV | - |
| Maximum DC Collector Current | 100 mA | - |
| Gain Bandwidth Product fT | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BCV62 | - |
| DC Current Gain hFE Max | 800 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 420 | - |
| Pd Power Dissipation | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 62C BCV BCV62CE6327XT E6327 SP000010891 | - |
| Unit Weight | 0.003880 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BCV62CE6327HTSA1 | Bipolar Transistors - BJT PNP 30 V 100 mA | |
| BCV62CE6327 | Infineon Bipolar Transistors for Current Mirror Application BCV62C - SOT143-4-1 | ||
| BCV62CE6327HTSA1 | TRANS 2PNP 30V 0.1A SOT143 |