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BCW33L

BCW33LT1G vs BCW33LT1 vs BCW33LT3

 
PartNumberBCW33LT1GBCW33LT1BCW33LT3
DescriptionBipolar Transistors - BJT 100mA 32V NPNTRANS NPN 32V 0.1A SOT-23Bipolar Transistors - BJT 100mA 32V NPN
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO32 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.25 V-250 mV
Maximum DC Collector Current0.1 A-100 mA
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBCW33L-BCW33L
DC Current Gain hFE Max800--
Height0.94 mm--
Length2.9 mm--
PackagingReel-Reel
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.1 A-0.1 A
DC Collector/Base Gain hfe Min420--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz-0.050717 oz
Package Case--SOT-23-3
Pd Power Dissipation--225 mW
Collector Emitter Voltage VCEO Max--32 V
Collector Base Voltage VCBO--32 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--420
Manufacturer Part # Description RFQ
BCW33LT1G Bipolar Transistors - BJT 100mA 32V NPN
BCW33LT3G Bipolar Transistors - BJT 100mA 32V NPN
ON Semiconductor
ON Semiconductor 		BCW33LT1 TRANS NPN 32V 0.1A SOT-23
BCW33LT3 Bipolar Transistors - BJT 100mA 32V NPN
BCW33LT1G Bipolar Transistors - BJT 100mA 32V NPN
BCW33LT3G Bipolar Transistors - BJT 100mA 32V NPN
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