 |  | | |
| PartNumber | BCW60DE6327HTSA1 | BCW60DE6327(75EA) | BCW60DE6327XT |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 32 V | - | - |
| Collector Base Voltage VCBO | 32 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCW60 | - | - |
| DC Current Gain hFE Max | 630 | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 380 | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 60D BCW BCW6DE6327XT E6327 SP000010549 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BCW60DE6327HTSA1 | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | |
| BCW60DE6327(75EA) | New and Original | ||
| BCW60DE6327HTSA1 | TRANS NPN 32V 0.1A SOT-23 | ||
| BCW60DE6327XT | New and Original | ||
| BCW60DE6327 | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | ||
| BCW60DE6327BTSA1 | Trans GP BJT NPN 32V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BCW60DE6327HTSA1) |