 |  | |
| PartNumber | BCW61AE6327HTSA1 | BCW61AE6327 |
| Description | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 32 V | - |
| Collector Base Voltage VCBO | 32 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 0.2 V | - |
| Maximum DC Collector Current | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BCW61 | - |
| DC Current Gain hFE Max | 220 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 120 | - |
| Pd Power Dissipation | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 61A BCW BCW61AE6327XT E6327 SP000010621 | - |
| Unit Weight | 0.000282 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BCW61AE6327HTSA1 | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | |
| BCW61AE6327 | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BCW61AE6327HTSA1 | TRANS PNP 32V 0.1A SOT-23 |