PartNumber | BCW66HQTA | BCW66HR | BCW66HTA |
Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT BCW66H/SOT23/TO-236A | Bipolar Transistors - BJT NPN Low Saturation |
Manufacturer | Diodes Incorporated | Nexperia | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
Collector Base Voltage VCBO | 75 V | 50 V | 75 V |
Emitter Base Voltage VEBO | 7 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.7 mV | 450 mV | 700 mV |
Maximum DC Collector Current | 800 mA | 800 mA | 1 A |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 630 | 630 | - |
Packaging | Reel | - | Reel |
Brand | Diodes Incorporated | Nexperia | Diodes Incorporated |
Continuous Collector Current | 800 mA | 800 mA | 0.8 A |
DC Collector/Base Gain hfe Min | 250 | 250 | - |
Pd Power Dissipation | 350 mW | 250 mW | 330 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Qualification | - | AEC-Q101 | - |
Series | - | - | BCW66 |
Height | - | - | 1.1 mm |
Length | - | - | 3 mm |
Width | - | - | 1.4 mm |
Unit Weight | - | - | 0.000282 oz |