BCX5410

BCX5410TA vs BCX5410 vs BCX5410E6327

 
PartNumberBCX5410TABCX5410BCX5410E6327
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1KSmall Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AATRANS NPN 45V 1A SOT-89
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTIC Chips-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBCX54BCX54-
Height1.6 mm--
Length4.6 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.6 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min63--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-1A-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-63 @ 150mA, 2V-
Vce Saturation Max Ib Ic-500mV @ 50mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-150MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-45 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-63-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BCX5410TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
BCX5410 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
BCX5410TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Infineon Technologies
Infineon Technologies
BCX5410E6327 TRANS NPN 45V 1A SOT-89
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