PartNumber | BCX5616QTA | BCX5616Q-13 | BCX5616Q-F-F |
Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-89-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 0.5 V | - | - |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 150 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 250 | - | - |
Packaging | Reel | - | - |
Brand | Diodes Incorporated | - | - |
Continuous Collector Current | 1 A | - | - |
DC Collector/Base Gain hfe Min | 100 | - | - |
Pd Power Dissipation | 2 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |