PartNumber | BCY58-IX | BCY58-VIII | BCY58-VII |
Description | Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W | Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W | Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-18 | TO-18 | TO-18 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 32 V | 32 V | 32 V |
Collector Base Voltage VCBO | 32 V | 32 V | 32 V |
Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | 0.7 V |
Maximum DC Collector Current | 200 mA | 200 mA | 200 mA |
Gain Bandwidth Product fT | 150 MHz | 150 MHz | 150 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
Packaging | Bulk | Bulk | Bulk |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 100 mA | 100 mA | 100 mA |
DC Collector/Base Gain hfe Min | 40 At 10 uA, 5 V | 20 At 10 uA , 5 V | 40 At 100 mA, 1 V |
Pd Power Dissipation | 340 mW | 340 mW | 340 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | BCY58-IX PBFREE | BCY58-VIII PBFREE | BCY58-VII PBFREE |