BD13610S

BD13610STU vs BD13610S

 
PartNumberBD13610STUBD13610S
DescriptionBipolar Transistors - BJT PNP Si Transistor EpitaxialBipolar Transistors - BJT PNP Si Transistor Epitaxial
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-126-3TO-126-3
Transistor PolarityPNPPNP
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max- 45 V- 45 V
Collector Base Voltage VCBO- 45 V- 45 V
Emitter Base Voltage VEBO- 5 V- 5 V
Collector Emitter Saturation Voltage- 0.5 V- 500 mV
Maximum DC Collector Current1.5 A- 1.5 A
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesBD136BD136
DC Current Gain hFE Max250250
Height11 mm11 mm
Length8 mm8 mm
PackagingTubeBulk
Width3.25 mm3.25 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Continuous Collector Current- 1.5 A- 1.5 A
DC Collector/Base Gain hfe Min4040
Pd Power Dissipation12.5 W12.5 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity19202000
SubcategoryTransistorsTransistors
Unit Weight0.026843 oz0.026843 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
BD13610STU Bipolar Transistors - BJT PNP Si Transistor Epitaxial
BD13610S Bipolar Transistors - BJT PNP Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
BD13610STU TRANS PNP 45V 1.5A TO-126
BD13610S TRANS PNP 45V 1.5A TO-126
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