BD13810

BD13810STU vs BD13810S

 
PartNumberBD13810STUBD13810S
DescriptionBipolar Transistors - BJT PNP Epitaxial SilTRANS PNP 60V 1.5A TO-126
ManufacturerON Semiconductor-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleThrough Hole-
Package / CaseTO-126-3-
Transistor PolarityPNP-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max60 V-
Collector Base Voltage VCBO- 60 V-
Emitter Base Voltage VEBO- 5 V-
Collector Emitter Saturation Voltage- 0.5 V-
Maximum DC Collector Current1.5 A-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
SeriesBD138-
DC Current Gain hFE Max250-
Height11 mm-
Length8 mm-
PackagingTube-
Width3.25 mm-
BrandON Semiconductor / Fairchild-
Continuous Collector Current- 1.5 A-
DC Collector/Base Gain hfe Min40-
Pd Power Dissipation12.5 W-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity1920-
SubcategoryTransistors-
Part # AliasesBD13810STU_NL-
Unit Weight0.026843 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
BD13810STU Bipolar Transistors - BJT PNP Epitaxial Sil
ON Semiconductor
ON Semiconductor
BD13810S TRANS PNP 60V 1.5A TO-126
BD13810STU TRANS PNP 60V 1.5A TO-126
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