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BD139-1

BD139-10 vs BD139-16 SL vs BD139-16

 
PartNumberBD139-10BD139-16 SLBD139-16
DescriptionBipolar Transistors - BJT NPN Silicon TrnsistrBipolar Transistors - BJT NPN Silicon Trnsist
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseSOT-32-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1.5 A-1.5 A
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBD139-BD139
Height10.8 mm--
Length7.8 mm--
PackagingTube-Tube
Width2.7 mm--
BrandSTMicroelectronics--
DC Collector/Base Gain hfe Min63--
Pd Power Dissipation1250 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.002116 oz--
Package Case--TO-225AA, TO-126-3
Mounting Type--Through Hole
Supplier Device Package--SOT-32-3
Power Max--1.25W
Transistor Type--NPN
Current Collector Ic Max--1.5A
Voltage Collector Emitter Breakdown Max--80V
DC Current Gain hFE Min Ic Vce--40 @ 150mA, 2V
Vce Saturation Max Ib Ic--500mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition---
Pd Power Dissipation--1250 mW
Collector Emitter Voltage VCEO Max--80 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--100
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics 		BD139-10 Bipolar Transistors - BJT NPN Silicon Trnsistr
BD139-10 Bipolar Transistors - BJT NPN Silicon Trnsist
BD139-16 Bipolar Transistors - BJT NPN Silicon Trnsist
ON Semiconductor
ON Semiconductor 		BD139-16 SL New and Original
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