PartNumber | BD13910STU | BD13910S | BD13910 |
Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Epitaxial Sil | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-126-3 | TO-126-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 80 V | 80 V | - |
Collector Base Voltage VCBO | 80 V | 80 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
Maximum DC Collector Current | 1.5 A | 1.5 A | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BD139 | BD139 | - |
DC Current Gain hFE Max | 250 | 160 | - |
Height | 1.5 mm | 1.5 mm | - |
Length | 8 mm | 8 mm | - |
Packaging | Tube | Bulk | - |
Width | 3.25 mm | 3.25 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Continuous Collector Current | 1.5 A | 1.5 A | - |
DC Collector/Base Gain hfe Min | 40 | 40 | - |
Pd Power Dissipation | 12.5 W | 12.5 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1920 | 2000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | BD13910STU_NL | BD13910S_NL | - |
Unit Weight | 0.026843 oz | 0.026843 oz | - |