PartNumber | BD14010STU | BD14010S |
Description | Bipolar Transistors - BJT PNP Si Transistor Epitaxial | Bipolar Transistors - BJT PNP Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-126-3 | TO-126-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | - 80 V | - 80 V |
Collector Base Voltage VCBO | - 80 V | - 80 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 0.5 V | - 0.5 V |
Maximum DC Collector Current | 1.5 A | 1.5 A |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BD140 | BD140 |
DC Current Gain hFE Max | 250 | 250 |
Height | 11 mm | 11 mm |
Length | 8 mm | 8 mm |
Packaging | Tube | Bulk |
Width | 3.25 mm | 3.25 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | - 1.5 A | - 1.5 A |
DC Collector/Base Gain hfe Min | 40 | 40 |
Pd Power Dissipation | 12.5 W | 12.5 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1920 | 250 |
Subcategory | Transistors | Transistors |
Part # Aliases | BD14010STU_NL | BD14010S_NL |
Unit Weight | 0.026843 oz | 0.026843 oz |