BD159

BD159G vs BD159 vs BD159STU

 
PartNumberBD159GBD159BD159STU
DescriptionBipolar Transistors - BJT 0.5A 350V 20W NPNBipolar Transistors - BJT 0.5A 350V 20W NPNTRANS NPN 350V 0.5A TO-126
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-225-3TO-225-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max350 V350 V-
Collector Base Voltage VCBO375 V375 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current0.5 A0.5 A0.5 A
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 50 C
SeriesBD159--
Height11.1 mm11.04 mm (Max)-
Length7.8 mm7.74 mm (Max)-
PackagingBulkBulkTube
Width3 mm2.66 mm (Max)-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.5 A0.5 A0.5 A
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation20 W20 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity500500-
SubcategoryTransistorsTransistors-
Unit Weight0.007478 oz0.068784 oz0.026843 oz
Package Case--TO-126
Pd Power Dissipation--20 W
Collector Emitter Voltage VCEO Max--350 V
Collector Base Voltage VCBO--375 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--30
DC Current Gain hFE Max--240
Manufacturer Part # Description RFQ
BD159G Bipolar Transistors - BJT 0.5A 350V 20W NPN
ON Semiconductor
ON Semiconductor
BD159 Bipolar Transistors - BJT 0.5A 350V 20W NPN
BD159 TRANS NPN 350V 0.5A TO-225
BD159G Bipolar Transistors - BJT 0.5A 350V 20W NPN
BD159STU TRANS NPN 350V 0.5A TO-126
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