PartNumber | BD434S | BD434 | BD434-S |
Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Medium Power | |
Manufacturer | ON Semiconductor | STMicroelectronics | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-126-3 | SOT-32-3 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | - 22 V | 22 V | - |
Collector Base Voltage VCBO | - 22 V | 22 V | - |
Emitter Base Voltage VEBO | - 5 V | 5 V | - |
Collector Emitter Saturation Voltage | - 0.2 V | 0.2 V | - |
Maximum DC Collector Current | 4 A | 4 A | - |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BD434 | BD434 | - |
Height | 11 mm | 10.8 mm | - |
Length | 8 mm | 7.8 mm | - |
Packaging | Bulk | Tube | - |
Width | 3.25 mm | 2.7 mm | - |
Brand | ON Semiconductor / Fairchild | STMicroelectronics | - |
DC Collector/Base Gain hfe Min | 40 | 40 | - |
Pd Power Dissipation | 36 W | 36 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 2000 | 50 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | BD434S_NL | - | - |
Unit Weight | 0.026843 oz | 0.002116 oz | - |
DC Current Gain hFE Max | - | 130 | - |
Continuous Collector Current | - | 4 A | - |