PartNumber | BD912 | BD911 |
Description | Bipolar Transistors - BJT PNP General Purpose | Bipolar Transistors - BJT NPN General Purpose |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Transistor Polarity | PNP | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 100 V | 100 V |
Collector Base Voltage VCBO | 100 V | 100 V |
Emitter Base Voltage VEBO | - 5 V | 5 V |
Maximum DC Collector Current | 15 A | 15 A |
Gain Bandwidth Product fT | 3 MHz | 3 MHz |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BD912 | BD911 |
DC Current Gain hFE Max | 150 | 150 |
Height | 9.15 mm (Max) | 9.15 mm |
Length | 10.4 mm (Max) | 10.4 mm |
Packaging | Tube | - |
Width | 4.6 mm (Max) | 4.6 mm |
Brand | STMicroelectronics | STMicroelectronics |
DC Collector/Base Gain hfe Min | 15 | 15 |
Pd Power Dissipation | 90 W | 90 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.211644 oz | 0.211644 oz |
Collector Emitter Saturation Voltage | - | 1 V |