BDP949H

BDP949H6327 vs BDP949H6327XTSA1-CUT TAPE vs BDP949H6327XTSA1

 
PartNumberBDP949H6327BDP949H6327XTSA1-CUT TAPEBDP949H6327XTSA1
DescriptionTRANS NPN 60V 3A SOT223
ManufacturerInfineon Technologies--
Product CategoryTransistors - Bipolar (BJT) - RF--
PackagingReel--
Part Aliases949 BDP H6327 SP000748382--
Unit Weight0.006632 oz--
Mounting StyleSMD/SMT--
Package CaseSOT-223-4--
TechnologySi--
ConfigurationSingle--
Pd Power Dissipation5 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 65 C--
Collector Emitter Voltage VCEO Max60 V--
Transistor PolarityNPN--
Collector Emitter Saturation Voltage500 mV--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT100 MHz--
DC Collector Base Gain hfe Min50 at 2 A 2 V--
DC Current Gain hFE Max---
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BDP949H6327 New and Original
BDP949H6327XTSA1 TRANS NPN 60V 3A SOT223
BDP949H6327XTSA1-CUT TAPE New and Original
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