BF823

BF823,215 vs BF823 vs BF823 4Z

 
PartNumberBF823,215BF823BF823 4Z
DescriptionBipolar Transistors - BJT TRANS HV TAPE-7TRANSISTOR, PNP, -250V, 60MHZ, SOT-23, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-250V, Transition Frequency ft:60MHz, Power Dissipation Pd:250mW, DC Collector Current:-50mA, D
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max250 V--
Collector Base Voltage VCBO250 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.05 A--
Gain Bandwidth Product fT60 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max50 at 25 mA, 20 V--
Height1 mm--
Length3 mm--
PackagingReel--
Width1.4 mm--
BrandNexperia--
DC Collector/Base Gain hfe Min50 at 25 mA, 20 V--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBF823 T/R--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BF823,215 Bipolar Transistors - BJT TRANS HV TAPE-7
BF823,215 TRANS PNP 250V 0.05A SOT23
NXP Semiconductors
NXP Semiconductors
BF823 TRANSISTOR, PNP, -250V, 60MHZ, SOT-23, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-250V, Transition Frequency ft:60MHz, Power Dissipation Pd:250mW, DC Collector Current:-50mA, D
BF823 4Z New and Original
BF823.215 Trans GP BJT PNP 250V 0.05A 3-Pin TO-236AB T/R (Alt: BF823,215)
BF823215 New and Original
BF823W New and Original
BF823 T/R Bipolar Transistors - BJT TRANS HV TAPE-7
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