BFG35

BFG35,115 vs BFG35 vs BFG35115

 
PartNumberBFG35,115BFG35BFG35115
DescriptionRF Bipolar Transistors NPN 10V 150mA 4GHZ
ManufacturerNXP--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max18 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current0.15 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-223--
PackagingReel--
Collector Base Voltage VCBO25 V--
DC Current Gain hFE Max25--
Height1.7 mm--
Length6.7 mm--
Operating Frequency4000 MHz--
TypeRF Bipolar Small Signal--
Width3.7 mm--
BrandNXP Semiconductors--
Gain Bandwidth Product fT4000 MHz--
Maximum DC Collector Current0.15 A--
Pd Power Dissipation1000 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases933919910115--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
BFG35,115 RF Bipolar Transistors NPN 10V 150mA 4GHZ
BFG35 New and Original
BFG35115 New and Original
BFG35,115 RF Bipolar Transistors NPN 10V 150mA 4GHZ
BFG35,115-CUT TAPE New and Original
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