 |  | |
| PartNumber | BFP842ESDH6327XTSA1 | BFP842ESDH6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | Infineon Ultra Low-Noise SiGe:C Transistor BFP842ESD - SOT343-4-2 |
| Manufacturer | Infineon | - |
| Product Category | RF Bipolar Transistors | - |
| RoHS | Y | - |
| Series | BFP842 | - |
| Transistor Type | Bipolar | - |
| Technology | SiGe | - |
| Collector Emitter Voltage VCEO Max | 3.25 V | - |
| Emitter Base Voltage VEBO | 4.1 V | - |
| Continuous Collector Current | 40 mA | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-343-4 | - |
| Packaging | Reel | - |
| DC Current Gain hFE Max | 450 | - |
| Operating Frequency | 60 GHz | - |
| Type | RF Silicon Germanium | - |
| Brand | Infineon Technologies | - |
| Pd Power Dissipation | 120 mW | - |
| Product Type | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 842ESD BFP BFP842ESDH6327XT H6327 SP000943012 | - |
| Unit Weight | 0.000243 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BFP842ESDH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | |
| BFP842ESDH6327 | Infineon Ultra Low-Noise SiGe:C Transistor BFP842ESD - SOT343-4-2 | ||
| BFP842ESDH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS |