PartNumber | BFQ 19S H6327 | BFQ 19S E6327 | BFQ 19S |
Description | Bipolar Transistors - BJT RF BIP TRANSISTORS | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | |
Manufacturer | Infineon | Infineon | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-89-4 | SOT-89-4 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 15 V | 15 V | - |
Collector Base Voltage VCBO | 20 V | 20 V | - |
Emitter Base Voltage VEBO | 3 V | 3 V | - |
Gain Bandwidth Product fT | 5.5 GHz | 5500 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BFQ19 | BFQ19 | - |
DC Current Gain hFE Max | 140 | - | - |
Packaging | Reel | Reel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Continuous Collector Current | 120 mA | 0.21 A | - |
DC Collector/Base Gain hfe Min | 70 | - | - |
Pd Power Dissipation | 1 W | 1000 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | BFQ19SH6327XTSA1 SP001125294 | BFQ19SE6327HTSA1 SP000011042 | - |
Unit Weight | 0.000353 oz | - | - |
Maximum DC Collector Current | - | 0.21 A | - |
Height | - | 1.5 mm | - |
Length | - | 4.5 mm | - |
Width | - | 2.5 mm | - |