PartNumber | BFU520YX | BFU520YF | BFU520Y115 |
Description | RF Bipolar Transistors NPN wideband silicon RF transistor | RF Bipolar Transistors Dual NPN wideband si silicon RF trans | - Bulk (Alt: BFU520Y115) |
Manufacturer | NXP | NXP | - |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | - |
RoHS | Y | Y | - |
Transistor Type | Bipolar Wideband | - | - |
Technology | Si | Si | - |
Transistor Polarity | NPN | - | - |
DC Collector/Base Gain hfe Min | 60 | - | - |
Collector Emitter Voltage VCEO Max | 16 V | - | - |
Emitter Base Voltage VEBO | 2 V | - | - |
Continuous Collector Current | 5 mA | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT363-6 | - | - |
Packaging | Reel | Reel | - |
Collector Base Voltage VCBO | 24 V | - | - |
DC Current Gain hFE Max | 200 | - | - |
Operating Frequency | 900 MHz | - | - |
Operating Temperature Range | - 40 C to + 150 C | - | - |
Type | Wideband RF Transistor | - | - |
Brand | NXP Semiconductors | NXP Semiconductors | - |
Gain Bandwidth Product fT | 10 GHz | - | - |
Maximum DC Collector Current | 50 mA | - | - |
Pd Power Dissipation | 450 mW | - | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 934067715115 | 934067715135 | - |
Unit Weight | 0.000195 oz | 0.000195 oz | - |