 |  | | |
| PartNumber | BFU530AR | BFU530ARNXP | BFU530AR-CUT TAPE |
| Description | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| Manufacturer | NXP | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Wideband | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 16 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 10 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 24 V | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| Operating Frequency | 900 MHz | - | - |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Type | Wideband RF Transistor | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 11 GHz | - | - |
| Maximum DC Collector Current | 65 mA | - | - |
| Pd Power Dissipation | 450 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934067698215 | - | - |
| Unit Weight | 0.000266 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU530AR | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| BFU530ARNXP | New and Original | ||
| BFU530AR | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto | ||
| BFU530AR-CUT TAPE | New and Original |