PartNumber | BFU550WX | BFU550WF |
Description | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | RF Bipolar Transistors NPN wideband silicon RF transistor |
Manufacturer | NXP | NXP |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors |
RoHS | Y | Y |
Transistor Type | Bipolar Wideband | - |
Technology | Si | Si |
Transistor Polarity | NPN | - |
DC Collector/Base Gain hfe Min | 60 | - |
Collector Emitter Voltage VCEO Max | 16 V | - |
Emitter Base Voltage VEBO | 2 V | - |
Continuous Collector Current | 15 mA | - |
Minimum Operating Temperature | - 40 C | - |
Maximum Operating Temperature | + 150 C | - |
Configuration | Single | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT323-3 | - |
Packaging | Reel | Reel |
Collector Base Voltage VCBO | 24 V | - |
DC Current Gain hFE Max | 200 | - |
Operating Frequency | 900 MHz | - |
Operating Temperature Range | - 40 C to + 150 C | - |
Type | Wideband RF Transistor | - |
Brand | NXP Semiconductors | NXP Semiconductors |
Gain Bandwidth Product fT | 11 GHz | - |
Maximum DC Collector Current | 80 mA | - |
Pd Power Dissipation | 450 mW | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors |
Factory Pack Quantity | 3000 | 10000 |
Subcategory | Transistors | Transistors |
Part # Aliases | 934067695115 | 934067695135 |
Unit Weight | 0.000196 oz | 0.000196 oz |