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| PartNumber | BFU580GX | BFU580QX | BFU580Q |
| Description | RF Bipolar Transistors NPN wideband silicon RF transistor | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| Manufacturer | NXP | NXP | NXP Semiconductors |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Transistor Type | Bipolar Wideband | Bipolar Wideband | NPN |
| Technology | Si | Si | Si |
| Transistor Polarity | NPN | NPN | NPN |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Collector Emitter Voltage VCEO Max | 16 V | 16 V | - |
| Emitter Base Voltage VEBO | 2 V | 2 V | - |
| Continuous Collector Current | 30 mA | 30 mA | 30 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Single | Dual |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT89-3 | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Collector Base Voltage VCBO | 24 V | 24 V | - |
| DC Current Gain hFE Max | 130 | 130 | - |
| Operating Frequency | 900 MHz | 900 MHz | 900 MHz |
| Operating Temperature Range | - 40 C to + 150 C | - 40 C to + 150 C | - |
| Type | Wideband RF Transistor | Wideband RF Transistor | - |
| Brand | NXP Semiconductors | NXP Semiconductors | - |
| Gain Bandwidth Product fT | 11 GHz | 10.5 GHz | - |
| Maximum DC Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 1000 mW | 1000 mW | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 934067974115 | 934067976115 | - |
| Unit Weight | 0.003447 oz | 0.001423 oz | - |
| Series | - | - | NPI Part Build_RF Transistors |
| Package Case | - | - | TO-243AA |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-89-3 |
| Power Max | - | - | 1W |
| Current Collector Ic Max | - | - | 60mA |
| Voltage Collector Emitter Breakdown Max | - | - | 12V |
| DC Current Gain hFE Min Ic Vce | - | - | 60 @ 30mA, 8V |
| Frequency Transition | - | - | 10.5GHz |
| Noise Figure dB Typ f | - | - | 1.3dB @ 1.8GHz |
| Gain | - | - | 8.5dB |
| Pd Power Dissipation | - | - | 1000 mW |
| Collector Emitter Voltage VCEO Max | - | - | 16 V |
| Emitter Base Voltage VEBO | - | - | 2 V |
| DC Collector Base Gain hfe Min | - | - | 60 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU580GX | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| BFU580QX | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU580Q | New and Original | ||
| BFU580GX | RF TRANS NPN 12V 11GHZ SOT223 | ||
| BFU580QX | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto |